A heterogeneous III-V/silicon integration platform for on-chip quantum photonic circuits with single quantum dot devices

摘要

Photonic integration is an enabling technology for photonic quantum science,offering greater scalability, stability, and functionality than traditionalbulk optics. Here, we describe a scalable, heterogeneous III-V/siliconintegration platform to produce Si$_3$N$_4$ photonic circuits incorporatingGaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantumdots. We demonstrate pure singlephoton emission from individual quantum dots inGaAs waveguides and cavities - where strong control of spontaneous emissionrate is observed - directly launched into Si$_3$N$_4$ waveguides with > 90 %efficiency through evanescent coupling. To date, InAs/GaAs quantum dotsconstitute the most promising solidstate triggered single-photon sources,offering bright, pure and indistinguishable emission that can be electricallyand optically controlled. Si$_3$N$_4$ waveguides offer low-loss propagation,tailorable dispersion and high Kerr nonlinearities, desirable for linear andnonlinear optical signal processing down to the quantum level. We combine thesetwo in an integration platform that will enable a new class of scalable,efficient and versatile integrated quantum photonic devices